IRF1010ESPbF |
Part Number | IRF1010ESPbF |
Manufacturer | International Rectifier |
Description | l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extre... |
Features |
n dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofile applications.
ID = 84A
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D2Pak IRF1010ES
TO-262 IRF1010EL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Ra... |
Document |
IRF1010ESPbF Data Sheet
PDF 244.33KB |
Similar Datasheet
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1 | IRF1010ES |
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2 | IRF1010ES |
INCHANGE |
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3 | IRF1010E |
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4 | IRF1010E |
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5 | IRF1010EL |
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6 | IRF1010ELPbF |
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HEXFET Power MOSFET |