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1N3070-1 |
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| Part Number | 1N3070-1 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | FEATURES 1N3070-1 • 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF• • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS A... |
| Features |
1N3070-1
• 1N3070-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF • • • • 19500/169 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine, 1uS: Surge Current B, sine, 1S: Total Power Dissipation: Operating Current: -65°C to +175°C -65°C to +175°C 2.0A 0.5A 500mW 100mA, TA= +25°C 175V Derating Factor: D.C. Reverse Voltage (VRWM): 0.667mA/°C above TA= +25°C DC ELECTRICAL CHARACTERISTICS VF Ambient (°C) IF mA Min Max Ambient V V (°C) IR V (dc) Min Max Ambient µA µA (°... |
| Document |
 1N3070-1 Data Sheet
PDF 73.64KB |
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