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FPD1500SOT89 |
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| Part Number | FPD1500SOT89 |
| Manufacturer | Filtronic |
| Description | AND APPLICATIONS The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 1500 μm Schottky barrier Gate, defined by hig... |
| Features |
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter Power at 1dB Gain Compression Small-Signal Gain Power-Added Efficiency POUT = P1dB Noise Figure Output Third-Order Intercept Point (from 15 to 5 dB below P1dB) Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| NF IP3 VDS = 5.0V; IDS = 50% IDSS VDS = 5.0V; IDS = 50% IDSS Matched for best P1dB Matched for best IP3 at 50% IDSS VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS ≅ +1 V VDS = 1.3 V... |
| Document |
 FPD1500SOT89 Data Sheet
PDF 423.87KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FPD1500DFN |
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HIGH LINEARITY PACKAGED PHEMTT |
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| 2 | FPD1500P100 |
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1W PACKAGED POWER PHEMT |
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| 3 | FPD10000AF |
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10W PACKAGED POWER PHEMT |
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| 4 | FPD10000V |
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10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
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| 5 | FPD1000AS |
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1W PACKAGED POWER PHEMT |
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| 6 | FPD1000V |
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1W POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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