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FPD1500DFN |
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| Part Number | FPD1500DFN |
| Manufacturer | Filtronic |
| Description | The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution ste... |
| Features |
(1850MHZ):
• • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC) Datasheet v2.1 PACKAGE: GENERAL DESCRIPTION: The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearit... |
| Document |
 FPD1500DFN Data Sheet
PDF 269.79KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FPD1500P100 |
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| 2 | FPD1500SOT89 |
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| 3 | FPD10000AF |
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| 4 | FPD10000V |
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| 5 | FPD1000AS |
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1W PACKAGED POWER PHEMT |
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| 6 | FPD1000V |
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1W POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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