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FPD1050 |
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| Part Number | FPD1050 |
| Manufacturer | Filtronic |
| Description | AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-base... |
| Features |
♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency
SOURCE BOND PAD (2x) DRAIN BOND PAD (2X)
FPD1050
GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE THICKNESS: 100 µm BONDING PADS: >85 x 60 µm
• DESCRIPTION AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to opt... |
| Document |
 FPD1050 Data Sheet
PDF 180.59KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FPD10000AF |
Filtronic |
10W PACKAGED POWER PHEMT |
|
| 2 | FPD10000V |
Filtronic |
10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
|
| 3 | FPD1000AS |
Filtronic |
1W PACKAGED POWER PHEMT |
|
| 4 | FPD1000V |
Filtronic |
1W POWER PHEMT |
|
| 5 | FPD1500DFN |
Filtronic |
HIGH LINEARITY PACKAGED PHEMTT |
|
| 6 | FPD1500P100 |
Filtronic |
1W PACKAGED POWER PHEMT |
|
Desde 2024. D4U Semiconductor.
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