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FPD1000V |
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| Part Number | FPD1000V |
| Manufacturer | Filtronic |
| Description | AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHE... |
| Features |
(1.8 GHz) ♦ 31 dBm Linear Output Power ♦ 16 dB Power Gain ♦ Useable Gain to 10 GHz ♦ 41 dBm Output IP3 ♦ Maximum Stable Gain of 20 dB ♦ 50% Power-Added Efficiency ♦ 10V Operation / Plated Source Thru-Vias
DRAIN BOND PAD (2X)
FPD1000V
1W POWER PHEMT
GATE BOND PAD (2X)
• DESCRIPTION AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does n... |
| Document |
 FPD1000V Data Sheet
PDF 200.99KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | FPD10000AF |
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10W PACKAGED POWER PHEMT |
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| 2 | FPD10000V |
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10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS |
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| 3 | FPD1000AS |
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| 4 | FPD1050 |
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| 5 | FPD1500DFN |
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HIGH LINEARITY PACKAGED PHEMTT |
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| 6 | FPD1500P100 |
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1W PACKAGED POWER PHEMT |
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Desde 2024. D4U Semiconductor.
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