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CED6060R |
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| Part Number | CED6060R |
| Manufacturer | CET |
| Description | CED6060R/CEU6060R N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handi... |
| Features |
60V, 30A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous Drain Current-Pulsed a
ID 30 IDM 120
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C
PD
50 0.34
Single Pulsed Avalanche Energy d Single Pulsed Avalanche... |
| Document |
 CED6060R Data Sheet
PDF 375.91KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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