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CED20N06 |
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| Part Number | CED20N06 |
| Manufacturer | CET |
| Description | CED20N06/CEU20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). ... |
| Features |
60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired. TO-251 & TO-252 package.
D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 60
Units V V A A W W/ C C
±20
20 60 60 0.4 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above... |
| Document |
 CED20N06 Data Sheet
PDF 124.28KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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