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CED12P10 |
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| Part Number | CED12P10 |
| Manufacturer | CET |
| Description | CED12P10/CEU12P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -9A, RDS(ON) = 315mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current h... |
| Features |
-100V, -9A, RDS(ON) = 315mΩ @VGS = -10V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252(D-PAK)
G D
G
S CED SERIES TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -100
Units V V A A W W/ C C
±30
-9 -36 50 0.4 -55 to 150
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Operating and St... |
| Document |
 CED12P10 Data Sheet
PDF 138.23KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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