Busque con el número de pieza junto con el fabricante o la descripción
CEP3120 |
Click to view a larger image
| Part Number | CEP3120 |
| Manufacturer | CET |
| Description | CEP3120/CEB3120 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High... |
| Features |
30V, 40A,RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
40 160 43 0.29 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25 C O... |
| Document |
 CEP3120 Data Sheet
PDF 301.02KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|