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CEP35P03 |
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| Part Number | CEP35P03 |
| Manufacturer | CET |
| Description | CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). H... |
| Features |
-30V, -35A, RDS(ON) =36mΩ @VGS = -10V. RDS(ON) =57mΩ @VGS = -5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G
S CEB SERIES TO-263(DD-PAK) G
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg -30
Units V V A A W W/ C C
±20
-35 -140 71 0.48 -55 to 175
Maximum Power Dissipation @ TC = 25 C - Derate above 25... |
| Document |
 CEP35P03 Data Sheet
PDF 105.13KB |
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