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CEP3070 |
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| Part Number | CEP3070 |
| Manufacturer | CET |
| Description | N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and curre... |
| Features |
30V, 72A ,RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
CEP3070/CEB3070
D
G
G D S
S CEB SERIES TO-263(DD-PAK)
G
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
±20
72 280 75 0.5 -55 to 175
Maximum Power Dissipation @ TC = 25 C - ... |
| Document |
 CEP3070 Data Sheet
PDF 349.13KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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