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CEM2108 |
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| Part Number | CEM2108 |
| Manufacturer | CET |
| Description | CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High... |
| Features |
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7 D2 6 D2 5
5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
9.5 35 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Chara... |
| Document |
 CEM2108 Data Sheet
PDF 140.28KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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