FQP10N50CF |
Part Number | FQP10N50CF |
Manufacturer | Fairchild Semiconductor |
Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
Features |
• 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficien... |
Document |
FQP10N50CF Data Sheet
PDF 0.99MB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
2 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
3 | FQP10N20 |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET | |
4 | FQP10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
5 | FQP10N20C |
INCHANGE |
N-Channel MOSFET | |
6 | FQP10N20L |
Fairchild Semiconductor |
200V LOGIC N-Channel MOSFET |