AP2302N |
Part Number | AP2302N |
Manufacturer | Advanced Power Electronics |
Title | N-CHANNEL ENHANCEMENT MODE |
Features |
44
AP2302N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50
Max. Units 85 115 1.2 1 1... |
Document |
AP2302N Data Sheet
PDF 103.21KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | AP2302 |
BCD Semiconductor |
3A DDR TERMINATION REGULATOR | |
2 | AP2302AGN-HF |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
3 | AP2302AGN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement-mode Power MOSFET | |
4 | AP2302GN |
Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | AP2302GN-HF |
Advanced Power Electronics |
N-channel Enhancement mode Power MOSFET | |
6 | AP2302GN-HF-3 |
Advanced Power Electronics |
N-channel Enhancement mode Power MOSFET |