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AP2305AN |
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| Part Number | AP2305AN |
| Manufacturer | Advanced Power Electronics |
| Description | SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally pref... |
| Features |
ol Rthj-amb Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200731031
AP2305AN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=-250uA
Min. -30 -0.5 -
Typ. -0.1
Max. Units 60 80 150 250 -1.2 -1 -25 ±100 18 1325 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=-10V, ID=-3.2A... |
| Document |
 AP2305AN Data Sheet
PDF 102.64KB |
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Desde 2024. D4U Semiconductor.
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