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AP2306AGN |
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| Part Number | AP2306AGN |
| Manufacturer | Advanced Power Electronics |
| Description | SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is univer... |
| Features |
istance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200105041
AP2306AGN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 30 0.5 -
Typ. 0.1 13 8.5 1.5 3.2 6 20 20 3 660 90 70
Max. Units 30 35 50 90 1.2 1 25 ±100 15 1050 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A VGS=4.5V, ... |
| Document |
 AP2306AGN Data Sheet
PDF 102.06KB |
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| 6 | AP2306GN |
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Desde 2024. D4U Semiconductor.
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