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AP2306GN |
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| Part Number | AP2306GN |
| Manufacturer | Advanced Power Electronics |
| Description | SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is univer... |
| Features |
mal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200509032
AP2306GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111
Max. Units 30 35 50 90 1 10 ±100 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A VGS=4.5V... |
| Document |
 AP2306GN Data Sheet
PDF 104.54KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AP2306GN-HF |
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| 2 | AP2306GN-HF-3 |
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| 3 | AP2306AGEN |
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| 4 | AP2306AGEN-HF |
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| 5 | AP2306AGN |
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| 6 | AP2306AGN-HF |
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N-CHANNEL ENHANCEMENT MODE |
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Desde 2024. D4U Semiconductor.
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