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AP2310GN |
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| Part Number | AP2310GN |
| Manufacturer | Advanced Power Electronics |
| Title | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Features |
sistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200910041
AP2310GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min.... |
| Document |
 AP2310GN Data Sheet
PDF 99.92KB |
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Desde 2024. D4U Semiconductor.
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