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FDN361BN |
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| Part Number | FDN361BN |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain sup... |
| Features |
x 1.4 A, 30 V.
RDS(ON) = 110 m: @ VGS = 10 V RDS(ON) = 160 m: @ VGS = 4.5 V
x Low gate charge
x Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities
x High performance trench technology for extremely low RDS(ON)
D
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and S... |
| Document |
 FDN361BN Data Sheet
PDF 153.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDN361AN |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDN360P |
Fairchild Semiconductor |
single P-Channel MOSFET |
|
| 3 | FDN360P |
ON Semiconductor |
P-Channel MOSFET |
|
| 4 | FDN302P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
| 5 | FDN302P |
ON Semiconductor |
P-Channel MOSFET |
|
| 6 | FDN304P |
Fairchild Semiconductor |
P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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