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FDMB506P |
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| Part Number | FDMB506P |
| Manufacturer | Fairchild Semiconductor |
| Description | This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge fo... |
| Features |
• –6.8 A, –20V. RDS(ON) = 30 mΩ @ VGS = –4.5V RDS(ON) = 38 mΩ @ VGS = –2.5V RDS(ON) = 70 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum • Fast switching Applications • Load switch • DC/DC Conversion • RoHS compliant PIN 1 GATE S D www.DataSheet4U.com 5 6 7 8 4 3 2 1 G D D D SOURCE D D MicroFET 3x1.9 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings –20 ±8 (Note 1a) Units V V A W °C –6.8 70 1.9 –55 to +150 (Note 1a) Operating ... |
| Document |
 FDMB506P Data Sheet
PDF 243.00KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMB2307NZ |
Fairchild Semiconductor |
Dual Common Drain N-Channel MOSFET |
|
| 2 | FDMB2307NZ |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 3 | FDMB2308PZ |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMB2308PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDMB3800N |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
|
| 6 | FDMB3800N |
ON Semiconductor |
Dual N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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