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FDB14N30 |
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| Part Number | FDB14N30 |
| Manufacturer | Fairchild Semiconductor |
| Description | UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switchi... |
| Features |
• RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 A • Low Gate Charge (Typ. 18 nC) • Low Crss (Typ.17 pF) • 100% Avalanche Tested • Improved dv/dt Capability Applications • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power... |
| Document |
 FDB14N30 Data Sheet
PDF 1.10MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDB14AN06LA0 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 2 | FDB101 |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 3 | FDB101 |
LGE |
Silicon Bridge Rectifiers |
|
| 4 | FDB101S |
Galaxy Semi-Conductor |
SILICON BRIDGE RECTIFIERS |
|
| 5 | FDB101S |
LGE |
Silicon Bridge Rectifiers |
|
| 6 | FDB101S |
SeCoS |
1.0 Amp Silicon Bridge Rectifiers |
|
Desde 2024. D4U Semiconductor.
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