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FDAF59N30 |
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| Part Number | FDAF59N30 |
| Manufacturer | Fairchild Semiconductor |
| Description | TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored t... |
| Features |
• 34A, 300V, RDS(on) = 0.056Ω @VGS = 10 V • Low gate charge ( typical 77 nC) • Low Crss ( typical 80 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability UniFET Description TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode ... |
| Document |
 FDAF59N30 Data Sheet
PDF 792.38KB |
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