AP2301N |
Part Number | AP2301N |
Manufacturer | Advanced Power Electronics |
Description | SOT-23 G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. The SOT-23 package is universally pref... |
Features |
ol Rthj-a Parameter Thermal Resistance Junction-ambient
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200407043
AP2301N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2
Test Conditions VGS=0V, ID=-250uA
Min. -20 -0.5 -
Typ. -0.1 4.4 5.2 1.36 0.6 5.2 9.7 19 29 295 170 65
Max. Units 130 190 -1 -10 ±100 10 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
V... |
Document |
AP2301N Data Sheet
PDF 103.16KB |
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