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AP2302GN |
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| Part Number | AP2302GN |
| Manufacturer | Advanced Power Electronics |
| Description | SOT-23 G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol VD... |
| Features |
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200114054
AP2302GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
2
Min. 20 0.5 -
Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50
Max. Units 85 115 1.2 1 10 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage... |
| Document |
 AP2302GN Data Sheet
PDF 101.65KB |
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Desde 2024. D4U Semiconductor.
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