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IRFR120ZPBF |
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| Part Number | IRFR120ZPBF |
| Manufacturer | International Rectifier |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperatur... |
| Features |
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95772B
IRFR120ZPbF... |
| Document |
 IRFR120ZPBF Data Sheet
PDF 318.59KB |
Similar Datasheet
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| 1 | IRFR120Z |
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| 2 | IRFR120Z |
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Desde 2024. D4U Semiconductor.
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