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MMBT589LT1 |
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| Part Number | MMBT589LT1 |
| Manufacturer | Motorola |
| Description | MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT589LT1/D High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applicatio... |
| Features |
ad 3. ref: Figure 8 Symbol PD (1) Max 310 2.5 Rq JA (1) PD (2) 403 710 5.7 Rq JA (2) PDsingle (3) 575 TJ, Tstg – 55 to +150 °C 176 Unit mW mW/°C °C/W mW mW/°C °C/W mW Thermal Clad is a trademark of the Bergquist Company m X ™: MicroExecutive Family of High Performance Surface Mount Devices Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1998 1 MMBT589LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector – Base Breakdown ... |
| Document |
 MMBT589LT1 Data Sheet
PDF 112.84KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MMBT589LT1 |
ON |
High Current Surface Mount PNP Silicon Switching Transistor |
|
| 2 | MMBT589LT1G |
ON Semiconductor |
High Current Surface Mount PNP Silicon Switching Transistor |
|
| 3 | MMBT589 |
GME |
PNP General Purpose Transistor |
|
| 4 | MMBT589 |
LITE-ON |
PNP General Purpose Transistor |
|
| 5 | MMBT589 |
SeCoS |
PNP Plastic Encapsulated Transistor |
|
| 6 | MMBT589 |
MMC |
PNP Silicon Plastic-Encapsulate Transistor |
|
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