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MBR835 |
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| Part Number | MBR835 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | www.DataSheet4U.com MBR835, MBR840, MBR845 Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geome... |
| Features |
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
http://onsemi.com
• • • • • • • High Current Capability Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage High Surge Capacity SCHOTTKY BARRIER RECTIFIERS 8.0 AMPERES Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All Ex... |
| Document |
 MBR835 Data Sheet
PDF 164.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MBR830 |
Diodes Incorporated |
8.0A SCHOTTKY BARRIER RECTIFIER |
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| 2 | MBR830 |
LGE |
Schottky Barrier Rectifiers |
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| 3 | MBR830 |
HY ELECTRONIC |
(MBR830 - MBR8100) SCHOTTKY BARRIER RECTIFIERS |
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| 4 | MBR830MFS |
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SWITCHMODE Power Rectifiers |
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| 5 | MBR830NG |
American First Semiconductor |
8.0A Leaded Type Schottky Barrier Rectifiers |
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| 6 | MBR835 |
Diodes Incorporated |
8.0A SCHOTTKY BARRIER RECTIFIER |
|
Desde 2024. D4U Semiconductor.
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