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STB19NB20-1 |
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| Part Number | STB19NB20-1 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj August 2002 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM
2
12
3
Value STP(B)19NB20(-1) 200 200 ± 30 19 12 76 125 1 5.5 –65 to 150 150 (1)ISD ≤ 19 A, di/dt ≤300A/µs,... |
| Document |
 STB19NB20-1 Data Sheet
PDF 447.52KB |
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Desde 2024. D4U Semiconductor.
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