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STB19NB20 |
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| Part Number | STB19NB20 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with ... |
| Features |
1) T s tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 oC o Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature
D2PAK TO-263 (suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value 200 200 ± 30 19 12 76 125 1 5.5 -65 to 150 150
( 1) ISD ≤ 19A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W /o C V/ns o C o C
( •) Pulse width limited by... |
| Document |
 STB19NB20 Data Sheet
PDF 107.52KB |
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Desde 2024. D4U Semiconductor.
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