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ST13007D |
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| Part Number | ST13007D |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.... |
| Features |
Current Base Peak Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature
April 2003
Value 700 400 9 8 16 4 8 80
-65 to 150 150
Unit V V V A A A A W oC oC
1/7
ST13007D
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient
Max Max
1.56 62.5
oC/W oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off Current (VBE = 0)
VCE = 700 V VCE = 700 V
Tc = 100 oC
ICEO
Collector Cut-off Current (IB = 0)
IEBO
Emitter Cut-off Cur... |
| Document |
 ST13007D Data Sheet
PDF 214.58KB |
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