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FDMA291P |
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| Part Number | FDMA291P |
| Manufacturer | Fairchild Semiconductor |
| Description | This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 ... |
| Features |
a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D 1 D 2 G 3
Bottom Drain Contact
Features
• –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V • Low profile – 0.8 mm maximum – in the new package MicroFET 2x2 mm 6 D 5 D 4 S MicroFET 2x2 Absolute Maximum Ratings Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted... |
| Document |
 FDMA291P Data Sheet
PDF 151.23KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMA291P |
ON Semiconductor |
P-Channel MOSFET |
|
| 2 | FDMA2002NZ |
Fairchild Semiconductor |
Dual N-Channel PowerTrench MOSFET |
|
| 3 | FDMA2002NZ |
ON Semiconductor |
Dual N-Channel MOSFET |
|
| 4 | FDMA037N08LC |
ON Semiconductor |
N-Channel MOSFET |
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| 5 | FDMA1023PZ |
Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET |
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| 6 | FDMA1023PZ |
ON Semiconductor |
Dual P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|