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STB135N10 |
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| Part Number | STB135N10 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, ... |
| Features |
SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(*) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 135 96 540 150 1 TBD TBD -55 to 175
(2) ISD ≤ 40A, di/d... |
| Document |
 STB135N10 Data Sheet
PDF 184.28KB |
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Desde 2024. D4U Semiconductor.
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