UPG110B NEC 2-8 GHZ WIDE-BAND AMPLIFIER Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

UPG110B

NEC
UPG110B
UPG110B UPG110B
zoom Click to view a larger image
Part Number UPG110B
Manufacturer NEC
Description The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems whe...
Features
• WIDE-BAND: 2 to 8 GHz
• HIGH GAIN: 15 dB at f = 2 to 8 GHz
• MEDIUM POWER: +14 dBm TYP at f = 2 to 8 GHz
• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω
• HERMETICALLY SEALED PACKAGE ASSURES HIGH Gain, GP (dB) GAIN vs. FREQUENCY AND TEMPERATURE 20 15 10 5 0 -5 -10 T = -25˚C T = +25˚C T = +75˚C RELIABILITY DESCRIPTION The UPG110B is a GaAs monolithic integrated circuit designed for use as a wide-band amplifier from 2 GHz to 8 GHz. The device is most suitable for the gain stage of microwave communication systems where high gain characteristics are required. The UPG110 is available in a 4 pin fla...

Document Datasheet UPG110B Data Sheet
PDF 87.94KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 UPG110P
NEC
2 to 8 GHz WIDE-BAND AMPLIFIER Datasheet
2 UPG11N120
UTC
1200V NPT PLANAR IGBT Datasheet
3 UPG100P
NEC
WIDE-BAND AMPLIFIER Datasheet
4 UPG101P
NEC
WIDE-BAND AMPLIFIER Datasheet
5 UPG103B
NEC
WIDE-BAND AMPLIFIER Datasheet
6 UPG10N60E
UTC
SMPS N-CHANNEL IGBT Datasheet
More datasheet from NEC
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad