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IXTC13N50 |
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| Part Number | IXTC13N50 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXTC 13N50 VDSS = 500 ... |
| Features |
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Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<35pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 0.4 V V
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VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V V GS = 10 V, ID = IT Not... |
| Document |
 IXTC13N50 Data Sheet
PDF 97.75KB |
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Desde 2024. D4U Semiconductor.
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