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RD01MUS1 |
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| Part Number | RD01MUS1 |
| Manufacturer | Mitsubishi Electric |
| Description | Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 1.5+/-0.1 RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications. TYPE NAME FEATURES High power... |
| Features |
High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz High Efficiency: 65%typ.
0.8 MIN 2.5+/-0.1
1
2
1.5+/-0.1
3
1.5+/-0.1
0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm
APPLICATION
For output stage of high power amplifiers in VHF/UHF Band mobile radio sets.
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead so... |
| Document |
 RD01MUS1 Data Sheet
PDF 387.12KB |
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