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IXFC15N80Q |
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| Part Number | IXFC15N80Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com IXFC 15N80Q HiPerFETTM ISOPLUS 220TM MOSFET Q-Class Electrically Isolated Back Surface N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS(on) = 800 V =... |
| Features |
Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<35pF) z Low RDS (on) z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier
z
G
D
S
Isolated back surface*
D = Drain
Applications DC-DC converters Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control
z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, I... |
| Document |
 IXFC15N80Q Data Sheet
PDF 537.88KB |
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Desde 2024. D4U Semiconductor.
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