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RD09MUP2 |
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| Part Number | RD09MUP2 |
| Manufacturer | Mitsubishi Electric |
| Description | RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications. (3.6) (d) FEATURES •High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+... |
| Features |
•High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+/-0.2 •High Efficiency: 50%min. (520MHz) •Integrated gate protection diode INDEX MARK [Gate] TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source APPLICATION SIDE VIEW Standoff = max 0.05 For output stage of high power amplifiers in UHF band mobile radio sets. 0.7+/-0.1 UNIT:mm DETAIL A NOTES: 1. ( ) Typical value RoHS COMPLIANT RD09MUP2 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. Th... |
| Document |
 RD09MUP2 Data Sheet
PDF 178.35KB |
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