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TC55NEM208AFPV |
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| Part Number | TC55NEM208AFPV |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | The TC55NEM208AFPV/AFTV is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operate... |
| Features |
• • • • • • • Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 2.7 to 5.5 V Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of −40° to 85°C Standby Current (maximum):20 µA • Access Times (maximum): TC55NEM208AFPV/AFTV 55 Access Time 55 ns 55 ns 30 ns 70 70 ns 70 ns 35 ns CE Access Time OE Access Time • Package: SOP32-P-525-1.27 (AFPV) (Weight: TSOP II32-P-400-1.27 (AFTV) (Weight: g typ) g typ) PIN ASSIGNMENT (TOP VIEW) 32 PIN SOP & TSOP A18 A... |
| Document |
 TC55NEM208AFPV Data Sheet
PDF 146.90KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC55NEM208AFPN |
Toshiba Semiconductor |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
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| 2 | TC55NEM208AFTN |
Toshiba Semiconductor |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
| 3 | TC55NEM208AFTV |
Toshiba Semiconductor |
STATIC RAM |
|
| 4 | TC55NEM216AFTN55 |
Toshiba Semiconductor |
(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
| 5 | TC55NEM216AFTN70 |
Toshiba Semiconductor |
(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
| 6 | TC55NEM216ASTV55 |
Toshiba Semiconductor |
(TC55NEM216ASTV55 / TC55NEM216ASTV77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
|
Desde 2024. D4U Semiconductor.
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