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2SA1179 |
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| Part Number | 2SA1179 |
| Manufacturer | ETC |
| Description | www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR (PNP) Plastic-Encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE ... |
| Features |
. High breakdown voltage MARKING: M
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Value -55 -50 -5 -150 200 -55-125 Units V V V mA mW ℃
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
Parameter Collector-base breakdown voltage Collector-emitter breakdo... |
| Document |
 2SA1179 Data Sheet
PDF 82.31KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1170 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1171 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SA1173 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2SA1175 |
NEC |
PNP SILICON TRANSISTOR |
|
| 6 | 2SA1177 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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