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IXTH12N100 |
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| Part Number | IXTH12N100 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com MegaMOSTMFET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS 1000 V 1000 V ID25 10 A 12 A RDS(on) 1.20 Ω 1.05 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ... |
| Features |
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 2 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 1.20 1.05 V V nA µA mA Ω Ω
Applications
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VDSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 3 mA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS VGS = 0 V VGS = 10 ... |
| Document |
 IXTH12N100 Data Sheet
PDF 135.23KB |
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