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PBSS4160DS |
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| Part Number | PBSS4160DS |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. 1.2 Features s s s s s Low collect... |
| Features |
s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
s Dual low power switches (e.g. motors, fans) s Automotive applications
1.4 Quick reference data
Table 1: Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ... |
| Document |
 PBSS4160DS Data Sheet
PDF 192.20KB |
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Desde 2024. D4U Semiconductor.
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