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PBSS303NX |
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| Part Number | PBSS303NX |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. 1.2 Features I I I ... |
| Features |
I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I I I I I DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. VCEO IC ICM RCEsat
[1]
Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 4 A; IB = 200 mA
[1]
Symbol Parameter collector-emitter vol... |
| Document |
 PBSS303NX Data Sheet
PDF 173.76KB |
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