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IRGS4065PBF |
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| Part Number | IRGS4065PBF |
| Manufacturer | International Rectifier |
| Description | This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which... |
| Features |
Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
l
IRGB4065PbF IRGS4065PbF
Key Parameters
300 1.75 205 150 V V A °C
VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C c T J max
C
C
C E C G
D2Pak IRGS4065DPbF
G E
E C G
n-channel
TO-220 IRGB4065DPbF
G Gate
C Collector
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advan... |
| Document |
 IRGS4065PBF Data Sheet
PDF 811.57KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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