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FQI58N08 |
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| Part Number | FQI58N08 |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize ... |
| Features |
• • • • • • • 57.5A, 80V, RDS(on) = 0.024Ω @VGS = 10 V Low gate charge ( typical 50 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQB58N08 / FQI58N08 80 57.5 40.6 230 ± 25 (Note 2) (Note 1) (Note 1) ... |
| Document |
 FQI58N08 Data Sheet
PDF 660.23KB |
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Desde 2024. D4U Semiconductor.
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