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IXGT60N60B2 |
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| Part Number | IXGT60N60B2 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 kHz hard switching and up to 100 KHz resonant switching IXGH 60N60B2 IXGT 60N60B2 VCES IC25 VCE(sat) tfi typ = 600 ... |
| Features |
z
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb.in. 6 4 g g
z z z
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Applications
z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V
z z
z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 50 A, ... |
| Document |
 IXGT60N60B2 Data Sheet
PDF 605.25KB |
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Desde 2024. D4U Semiconductor.
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