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IXFP3N120 |
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| Part Number | IXFP3N120 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg ... |
| Features |
z
1.13/10 Nm/lb.in. 4 2 g g
z z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 ±100 TJ = 25°C TJ = 125°C 50 2 4.5 V V nA µA mA Ω
z
Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1.5 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V
Advantages
z z z
Easy to mount Space savings H... |
| Document |
 IXFP3N120 Data Sheet
PDF 591.56KB |
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