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IXTC75N10 |
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| Part Number | IXTC75N10 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com ADVANCE TECHNICAL INFORMATION MegaMOSTMFET N-Channel Enhancement Mode IXTC 75N10 VDSS = 100 V = 72 A ID25 RDS(on) = 20 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md ... |
| Features |
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Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
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International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.020 V V nA µA mA Ω Advantages
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VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = 250 µA V DS = VGS, ID = 250 µA V GS = ±20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 ... |
| Document |
 IXTC75N10 Data Sheet
PDF 98.92KB |
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