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TC5117400BSJ |
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| Part Number | TC5117400BSJ |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit tech... |
| Features |
include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
Features • 4,194,304 word by 4 bit organization • Fast access time and cycle time • Single power supply of 5V± 10% with a built-in VBB generator • Low Power - 605mW MAX. Operating - (TC5117400BSJ/BST-60) - 523mW MAX. Operating - (TC5117400BSJ/BST-70) - 5.5mW MAX. Standby • Outputs unlatched at cycle end allows twodimensional chip selection • Common I/O capability using “EARLY WRITE” operation • Read-Modify-Write, CAS before RAS refresh, RAS-only refresh, H... |
| Document |
 TC5117400BSJ Data Sheet
PDF 1.10MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC5117400BSJ-60 |
Toshiba Semiconductor |
DRAM |
|
| 2 | TC5117400BSJ-70 |
Toshiba Semiconductor |
DRAM |
|
| 3 | TC5117400BST |
Toshiba Semiconductor |
DYNAMIC RAM |
|
| 4 | TC5117400BST-60 |
Toshiba Semiconductor |
DRAM |
|
| 5 | TC5117400BST-70 |
Toshiba Semiconductor |
DRAM |
|
| 6 | TC511000J-10 |
Toshiba |
DRAM |
|
Desde 2024. D4U Semiconductor.
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