STP11NM60 ST Microelectronics N-CHANNEL Power MOSFET Datasheet. existencias, precio

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STP11NM60

ST Microelectronics
STP11NM60
STP11NM60 STP11NM60
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Part Number STP11NM60
Manufacturer STMicroelectronics (https://www.st.com/)
Description The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resista...
Features ers allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj May 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature TO-220 TO-220FP 3 1 D PAK 2 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM...

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